Solid-state device technologies, which are available to the amplifier designer, fall, broadly, into three categories: bipolar junction transistors (BJTs) and junction diodes; junction field effect ...

The first step in designing a microwave frequency power amplifier monolithic microwave integrated circuit on a given GaN foundry process is to select the transistor size and bias, writes Liam Devlin.

Engineering researchers have demonstrated a new transistor that switches at only 0.1 volts and reduces power dissipation by over 90 percent compared to state-of-the-art silicon transistors. One of the ...

The digital age has resulted in a succession of smaller, cleaner and less power-hungry technologies since the days the personal computer fit atop a desk, replacing mainframe models that once filled ...

Low power design has become a cornerstone of modern integrated circuit development, driven by energy efficiency demands and the challenges of scaling in nanometre technologies. Innovations in ...

Last week, it was announced that Cambridge GaN Devices (CGD) will lead a €10.3m European project (‘GaNext’) to develop fast-switching intelligent GaN power modules. But who is this small UK company ...

While attending APEC 2019, it seemed that gallium-nitride (GaN) transistors were just coming into their own in high-volume applications, while silicon-carbide (SiC) transistors have found wide ...

Voltus-Fi Custom Power Integrity Solution enables designers to shrink the critical power signoff closure and analysis phase through key capabilities including: Cadence's patented voltage-based ...

Given the growing importance and impact of portable, battery-operated devices in today’s society, it’s easy to understand why power consumption has become such a critical factor in IC design. But it’s ...